XPS evidence for molecular charge-transfer doping of graphene

被引：101

作者：

Choudhury, Debraj ^{[1
,2
]}

Das, Barun ^{[1
]}

Sarma, D. D. ^{[1
]}

Rao, C. N. R. ^{[1
,3
,4
]}

机构：

[1] Indian Inst Sci, Solid State & Struct Chem Unit, Bangalore 560012, Karnataka, India

[2] Indian Inst Sci, Dept Phys, Bangalore 560012, Karnataka, India

[3] Jawaharlal Nehru Ctr Adv Sci Res, New Chem Unit, Bangalore 560064, Karnataka, India

[4] Jawaharlal Nehru Ctr Adv Sci Res, ICMS, Bangalore 560064, Karnataka, India

来源：

CHEMICAL PHYSICS LETTERS | 2010年 / 497卷 / 1-3期

关键词：

SPECTROSCOPY; ORIGIN; STATE; RAMAN;

D O I：

10.1016/j.cplett.2010.07.089

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

By employing X-ray photoelectron spectroscopy (XPS), we have been able to establish the occurrence of charge-transfer doping in few-layer graphene covered with electron acceptor (TCNE) and donor (TTF) molecules. We have performed quantitative estimates of the extent of charge transfer in these complexes and elucidated the origin of unusual shifts of their Raman G-bands and explained the differences in the dependence of conductivity on n- and p-doping. The study unravels the cause of the apparent difference between the charge-transfer doping and electrochemical doping. (C) 2010 Elsevier B.V. All rights reserved.

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页码：66 / 69

页数：4

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