Infrared photon detectors versus thermal detectors

被引：0
|
作者：
Rogalski, A [1 ]
机构：
[1] Mil Univ Technol, Dept Appl Phys, PL-01489 Warsaw, Poland
来源：
PHYSICS OF SEMICONDUCTOR DEVICES, VOLS 1 AND 2 | 1998年 / 3316卷
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Investigations of the performance of infrared photon detectors as compared to thermal detectors are presented. Due to fundamental different types of noise (generation-recombination noise in photon detectors and temperature fluctuation noise in thermal detectors), these two classes of detectors have different dependencies of detectivities on wavelength and temperature. The photon detectors are favoured at long wavelength infrared and lower operating temperatures. The thermal detectors are favoured at very long wavelength spectral range. The comparative studies of the thermal detectors with HgCdTe photoconductors and photodiodes, Schottky barrier photoemissive detectors, doped silicon detectors and quantum well infrared photodetectors are carried out.
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页码：754 / 761
页数：8
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