Nanodomain wall film structure and its magnetic characterization

被引：0
|
作者：
Jiang, H [1 ]
机构：
[1] Western Digital Corp, Fremont, CA 94539 USA
来源：
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2006年 / 298卷 / 02期
关键词：
domain wall; magnetoresistance; exchange coupling;
D O I：
10.1016/j.jmmm.2005.02.066
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this letter, we report on a nanodomain wall thin-film structure and its fabrication. The core unit of this structure consists of a magnetic nanodot layer sandwiched between a magnetically free layer and a pinned layer. When the magnetizations of the free layer and the pinned layer are unparallel, a nanodomain wall is formed in the magnetic nanodot. Based on this concept, a nanodomain wall film structure with a Ni/Al2O3 nanodot layer is prepared. Since the free and pinned layers are coupled through magnetic nanodots, a displacement of free layer M H loop from zero field is observed. By measuring the displacement field of the free layer, the nanodomain wall energy is estimated. (C) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：78 / 82
页数：5
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