Marangoni flow of molten silicon: The effects of oxygen partial pressure

被引：5
|
作者：
Hibiya, T [1 ]
机构：
[1] Tokyo Metropolitan Inst Technol, Dept Aerosp Engn, Hino, Tokyo 1910065, Japan
来源：
JOURNAL OF MATERIALS SCIENCE | 2005年 / 40卷 / 9-10期
关键词：
D O I：
10.1007/s10853-005-1968-x
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Instability of the Marangoni flow of molten silicon is discussed. Time-dependent behavior of azimuthal wave numbers (m) for flow instability was investigated based on temperature oscillation measurements using a theta-t analysis, and appearance ratio of each azimuthal wave number is analyzed. The relationship between frequency and azimuthal wave numbers is deduced from an analysis of appearance ratios at a decomposed frequency band using a wavelet analysis. Oxygen partial pressure at the melt surface can be predicted using the Ratto-Ricci-Arato model. Anomalous recalescence behavior and surface oxidation of levitated molten silicon are shown. Growth striation is induced in silicon crystals grown even under high oxygen-partial pressure. (C) 2005 Springer Science + Business Media, Inc.
引用
收藏
页码：2417 / 2423
页数：7
相关论文
共 50 条
  • [1] Marangoni flow of molten silicon: The effects of oxygen partial pressure
    T. Hibiya
    [J]. Journal of Materials Science, 2005, 40 : 2417 - 2423
  • [2] Marangoni flow at the molten silicon surface and the effect of oxygen partial pressure of ambient atmosphere on it
    Hibiya, T
    Nakamura, S
    Azami, T
    Mukai, K
    Imaishi, N
    [J]. CRYSTAL AND EPITAXIAL GROWTH, VOL 1, 2002, : 209 - 212
  • [3] Effect of oxygen partial pressure on the marangoni flow of molten metals
    Hibiya, Taketoshi
    Ozawa, Shumpei
    [J]. CRYSTAL RESEARCH AND TECHNOLOGY, 2013, 48 (04) : 208 - 213
  • [4] Marangoni flow of molten silicon
    Hibiya, T
    Nakamura, S
    Azami, T
    Sumiji, M
    Imaishi, N
    Mukai, K
    Onuma, K
    Yoda, S
    [J]. ACTA ASTRONAUTICA, 2001, 48 (2-3) : 71 - 78
  • [5] The effect of oxygen partial pressure on surface tension and thermocapillary flow of molten silicon
    Hibiya, T
    Mukai, K
    Azami, T
    Nakamura, S
    Sumiji, M
    [J]. FIRST INTERNATIONAL SYMPOSIUM ON MICROGRAVITY RESEARCH & APPLICATIONS IN PHYSICAL SCIENCES AND BIOTECHNOLOGY, VOLS I AND II, PROCEEDINGS, 2001, 454 : 389 - 394
  • [6] Effect of oxygen partial pressure on silicon single crystal growth by floating zone technique: surface oxidation and Marangoni flow
    Hibiya, T
    Asai, Y
    Sumiji, M
    Kojima, T
    [J]. CRYSTAL RESEARCH AND TECHNOLOGY, 2003, 38 (7-8) : 619 - 626
  • [7] The effect of oxygen partial pressure on marangoni-flow-induced dopant striations in floating-zone silicon crystals
    Sumiji, M
    Azami, T
    Hibiya, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (10): : 6243 - 6247
  • [8] Interfacial phenomena of molten silicon: Marangoni flow and surface tension
    Hibiya, T
    Nakamura, S
    Mukai, K
    Niu, ZG
    Imaishi, N
    Nishizawa, S
    Yoda, S
    Koyama, M
    [J]. PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 1998, 356 (1739): : 899 - 909
  • [9] Effects of boron and carbon on the surface tension of molten silicon under precisely controlled oxygen partial pressure
    Mukai, K
    Yuan, ZF
    [J]. MATERIALS TRANSACTIONS JIM, 2000, 41 (02): : 331 - 337
  • [10] The effect of oxygen on the temperature fluctuation of Marangoni convection in a molten silicon bridge
    Azami, T
    Nakamura, S
    Hibiya, T
    [J]. JOURNAL OF CRYSTAL GROWTH, 2001, 223 (1-2) : 116 - 124
12345