Single contact beam induced current phenomenon for microelectronic failure analysis

被引：5

作者：

Phang, JCH

Chan, DSH

Ong, VKS

Kolachina, S

Chin, JM

Palaniappan, M

Gilfeather, G

Seah, YX

机构：

[1] Natl Univ Singapore, Ctr Integrated Circuit Failure Anal & Reliabil, Singapore 11926, Singapore

[2] Nanyang Technol Univ, Singapore 639798, Singapore

[3] Texas Instruments Inc, Stafford, TX 77477 USA

[4] Adv Micro Devices Inc, Singapore 469032, Singapore

[5] Adv Micro Devices Inc, Austin, TX 78741 USA

来源：

MICROELECTRONICS RELIABILITY | 2003年 / 43卷 / 9-11期

关键词：

D O I：

10.1016/S0026-2714(03)00280-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The single contact beam induced current technique was developed to overcome the limitation of beam induced techniques which require contacts to both sides of the junction for imaging and characterization. The SCBIC technique uses only a single contact, usually the substrate, to image and characterize all the junctions that are connected directly or indirectly to the contact. In this paper, the theory of the single contact induced beam current phenomenon and a comparison of the application of the technique using electron, ion and photon beams are described. Implementation issues are discussed and application of the technique for both frontside and backside microelectronic failure analysis are presented. (C) 2003 Elsevier Ltd. All rights reserved.

引用

页码：1595 / 1602

页数：8

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