TCAD study of DLC coatings for large-area high-power diodes

被引：3

作者：

Reggiani, S. ^{[1
,2
]}

Balestra, L. ^{[1
,2
]}

Gnudi, A. ^{[1
,2
]}

Gnani, E. ^{[1
,2
]}

Baccarani, G. ^{[1
,2
]}

Dobrzynska, J. ^{[3
]}

Vobecky, J. ^{[3
]}

Tosi, C. ^{[3
]}

机构：

[1] Univ Bologna, ARCES, Bologna, Italy

[2] Univ Bologna, DEI, Bologna, Italy

[3] ABB Semicond Ltd, Fabrikstr 3, Lenzburg, Switzerland

来源：

MICROELECTRONICS RELIABILITY | 2018年 / 88-90卷

关键词：

AMORPHOUS-CARBON; FILMS;

D O I：

10.1016/j.microrel.2018.06.075

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The most relevant transport features of doped diamond-like carbon (DLC) films have been implemented in a TCAD setup to provide a theoretical tool to assess the reliability expectations for high-voltage device passivation. Starting from the band structure and boundary conditions of a metal-insulator-semiconductor (MIS) device, trap states in the bandgap have been used to determine the characteristics of differently doped DLC layers against experiments. The role of the DLC as a passivation layer on top of the bevel termination of a high-voltage diode has been studied and compared with experiments. The breakdown voltage is significantly influenced by the properties of the DLC as clearly explained by the TCAD simulation results.

引用

页码：1094 / 1097

页数：4

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