机构:Carl von Ossietzky Univ Oldenburg, Fac Phys, Dept Energy & Semicond Res, D-26111 Oldenburg, Germany
Heinz, G
Parisi, J
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Carl von Ossietzky Univ Oldenburg, Fac Phys, Dept Energy & Semicond Res, D-26111 Oldenburg, GermanyCarl von Ossietzky Univ Oldenburg, Fac Phys, Dept Energy & Semicond Res, D-26111 Oldenburg, Germany
Parisi, J
Pokrovskii, VY
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Pokrovskii, VY
Kittel, A
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Hokkaido Univ, Grad Sch Engn, Dept Appl Phys, Kita Ku, Sapporo, Hokkaido 0608628, JapanHokkaido Univ, Grad Sch Engn, Dept Appl Phys, Kita Ku, Sapporo, Hokkaido 0608628, Japan
Toshima, T
Tanda, S
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Hokkaido Univ, Grad Sch Engn, Dept Appl Phys, Kita Ku, Sapporo, Hokkaido 0608628, JapanHokkaido Univ, Grad Sch Engn, Dept Appl Phys, Kita Ku, Sapporo, Hokkaido 0608628, Japan
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PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS,
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机构:
Ctr. de Rech. sur les Tres Basses T., University Joseph Fourier, CNRS, BP 166, 38042 Grenoble Cedex 9, France
Inst. of Radioengineering and E., Mokhovaya 11, 103907 Moscow, RussiaCtr. de Rech. sur les Tres Basses T., University Joseph Fourier, CNRS, BP 166, 38042 Grenoble Cedex 9, France
Latyshev, Yu. I.
Monceau, P.
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Ctr. de Rech. sur les Tres Basses T., University Joseph Fourier, CNRS, BP 166, 38042 Grenoble Cedex 9, FranceCtr. de Rech. sur les Tres Basses T., University Joseph Fourier, CNRS, BP 166, 38042 Grenoble Cedex 9, France
Monceau, P.
Laborde, O.
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Ctr. de Rech. sur les Tres Basses T., University Joseph Fourier, CNRS, BP 166, 38042 Grenoble Cedex 9, FranceCtr. de Rech. sur les Tres Basses T., University Joseph Fourier, CNRS, BP 166, 38042 Grenoble Cedex 9, France
Laborde, O.
Pannetier, B.
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Ctr. de Rech. sur les Tres Basses T., University Joseph Fourier, CNRS, BP 166, 38042 Grenoble Cedex 9, FranceCtr. de Rech. sur les Tres Basses T., University Joseph Fourier, CNRS, BP 166, 38042 Grenoble Cedex 9, France