Ferromagnetism in Mn-doped III - V Nanowires

被引:0
|
作者
Galicka, M. [1 ]
Bukala, M. [1 ]
Buczko, R. [1 ]
Kacman, P. [1 ]
机构
[1] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
关键词
Semiconductor nanowires; Ferromagnetism; ab initio calculations;
D O I
10.1063/1.3666589
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Using ab initio methods based on the density functional theory, we study the stability of Mn-doped GaAs and InAs nanowires as well as their electronic and magnetic properties. The model nanowires were constructed using bulk atomic positions of either zinc-blende or wurtzite structures along (111) and (0001) crystallographic directions, respectively. The calculations show that in such one-dimensional structures the distribution of Mn ions as well as their mutual spin alignment depends crucially on the crystallographic structure of the wire.
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页数:2
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