Submillimeter superconducting integrated receivers: Fabrication and yield

被引：30
|
作者：
Filippenko, LV
Shitov, SV
Dmitriev, PN
Ermakov, AB
Koshelets, VP
Gao, JR
机构：
[1] Russian Acad Sci, Inst Radio Engn & Elect, Moscow 103907, Russia
[2] SRON, Groningen, Netherlands
[3] Univ Groningen, Dept Appl Phys, NL-9747 AG Groningen, Netherlands
[4] Univ Groningen, Ctr Mat Sci, NL-9747 AG Groningen, Netherlands
来源：
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 2001年 / 11卷 / 01期
关键词：
Josephson effect; lift-off process; Nb technology; RIE process; SIS junction; SIS mixer; SIS receiver; SNEAP process; submillimeter receiver; superconducting tunnel junction;
D O I：
10.1109/77.919469
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Fabrication procedure and yield analysis of superconducting integrated receivers is reported. These chip receivers, apart from the quasi-optical SIS mixers, contain internal local oscillators and associated rf and de interfaces. Due to both complexity and design requirements of the integrated circuit, certain restrictions are applied to the standard Nb/Al/AlxOy/Nb SNEAP process. To obtain accurate area for micron-size SIS junctions and thickness for multi-layer SiO2 insulation, a few solutions and modifications were developed. The possibility of transfering this fabrication process worldwide has been proven experimentally.
引用
收藏
页码：816 / 819
页数：4
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