Inkjet-printed Oxide TFTs With Solution-processed Dual Semiconductors

To achieve the optimized electrical properties of an inkjet-printed double-active layer, the ZTO TFTs with various compositions of In2O3 solutions were examined. By controlling the annealing temperature and indium content, heterostructured In2O3/ZTO TFTs with improved mobility, threshold voltage and bias stability were obtained. The best electrical properties of the inkjet-printed double-active layer ZTO TFTs were obtained with 0.01 M of In2O3: a mobility of 8.6 cm(2)/V s, a threshold voltage of 2.76 V, a subthreshold slope of 0.52 V/dec, and an on-to-off current ratio of 10(6). The electrical properties of the inkjet-printed double-active layer oxide TFTs were superior to those of the single-active layered TFTs.