The Thickness-Dependent In-Plane Uniaxial Magnetic Anisotropy in Amorphous CoFeB Films on GaAs(001) Substrates

被引：3

作者：

Tu, Hongqing ^{[1
,2
,3
]}

You, Biao ^{[1
,2
,5
]}

Gao, Yuan ^{[1
,2
]}

Wang, Ji ^{[1
,2
]}

Ruan, Xuezhong ^{[4
]}

Du, Jun ^{[1
,2
,5
]}

机构：

[1] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China

[2] Nanjing Univ, Dept Phys, Nanjing 210093, Jiangsu, Peoples R China

[3] Nanjing Inst Technol, Dept Math & Phys, Nanjing 211167, Jiangsu, Peoples R China

[4] Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China

[5] Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China

来源：

JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM | 2016年 / 29卷 / 11期

关键词：

Uniaxial magnetic anisotropy; Magnetization reversal; Coherent rotation; Domain wall pinning; ANGULAR-DEPENDENCE; COERCIVITY;

D O I：

10.1007/s10948-016-3615-y

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In-plane uniaxial magnetic anisotropy (UMA) has been studied on a series of amorphous Co Fe-56 (24) B (20) (CoFeB) films deposited on GaAs(001) substrates. With the increasing of the CoFeB thickness from 3.5 to 20.0 nm, it was found that a large uniaxial anisotropy field (H (k)) of about 270 Oe decreases monotonically to a relatively small value of about 100 Oe. The thickness dependence of H (k) coincides with the common interface-induced UMA model. The magnetization reversal processes of this series of CoFeB films were also investigated. The evolution of the thickness-dependent magnetization reversal mechanisms was briefly discussed in terms of the Stoner-Wohlfarth model, the pinning of domain wall model, and the modified Kondorsky model.

引用

页码：2843 / 2848

页数：6

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[1] The Thickness-Dependent In-Plane Uniaxial Magnetic Anisotropy in Amorphous CoFeB Films on GaAs(001) Substrates
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