Corundum and industrial Si buried in carbon were reacted between 1400 similar to 1600 degrees C, and SiC, O'-Sialon and SiO2 were formed at T < 1550 degrees C. The products were analyzed by XRD, and the dynamic mechanism in association to the formation of Sialon was discussed. X-Sialon formed at T > 1550 degrees C. The products of Si3N4, SiO2 and SiC were formed from the reaction between Si and N-2, or Si and CO. Si2N2O and O'-Sialon were detected for the products. The sintered temperature and the starting compositions of the raw materials has great effects on the reaction rate and phase compositions of the products.