Electron emission from diamond having negative electron affinity

被引：0
|
作者：
Yamada, T
Chang, KS
Okano, K
Hiraki, A
机构：
[1] Tokai Univ, Dept Elect, Hiratsuka, Kanagawa 25912, Japan
[2] Kochi Univ Technol, Dept Elect & Photon Syst Engn, Kochi 782, Japan
来源：
ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS | 1998年 / 81卷 / 11期
关键词：
diamond; electron emission; negative electron affinity;
D O I：
10.1002/(SICI)1520-6432(199811)81:11<54::AID-ECJB7>3.0.CO;2-2
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Due to its negative affinity, diamond is expected to exhibit much better electron emission characteristics than other cold cathode materials. The authors used the mold method for fabricating boron-added pyramidal diamond with array surface control. When its electron emission characteristic is measured, it is found that the rise characteristic is lower than other cold cathode materials with identical shapes. It becomes clear that a stable current can be obtained from the surface after hydrogen treatment. On the other hand, the electron emission characteristic of nitrogen-doped diamond grown with urea as the impurity source exhibits extremely low rise and can be driven by a battery. Further, the analysis of the electron emission mechanism of diamond is investigated. (C) 1998 Scripta Technica, Electron Comm Jpn Pt 2, 81(11): 54-64, 1998.
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页码：54 / 64
页数：11
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