Interaction Mechanisms between Ar?O2 Post-discharge and Biphenyl

被引：14

作者：

Silva, Walter Dal'Maz ^{[1
,2
]}

Belmonte, Thierry ^{[1
]}

Duday, David ^{[3
]}

Frache, Gilles ^{[3
]}

Noel, Cedric ^{[1
]}

Choquet, Patrick ^{[3
]}

Migeon, Henri-Noel ^{[3
]}

Maliska, Ana Maria ^{[2
]}

机构：

[1] Nancy Univ, Inst Lamour, Dept Chem & Phys Solids & Surfaces, CNRS, F-54042 Nancy, France

[2] Univ Fed Santa Catarina, Mat Lab, Dept Engn Mecan, BR-88040900 Florianopolis, SC, Brazil

[3] Ctr Rech Publ Gabriel Lippmann, L-4422 Belvaux, Luxembourg

来源：

PLASMA PROCESSES AND POLYMERS | 2012年 / 9卷 / 02期

关键词：

biphenyl; films; melting point; plasma cleaning; post-discharge; MICROWAVE POSTDISCHARGES; AR-O-2; POSTDISCHARGE; OXYGEN POSTDISCHARGE; PLASMA STERILIZATION; SURFACE-TREATMENT; THIN-FILMS; O-ATOMS; PRESSURE; HEXATRIACONTANE; NITROGEN;

D O I：

10.1002/ppap.201100119

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Interactions between a late Ar?O2 post-discharge and biphenyl (C6H5)2 are studied. Thin films grown by spin-coating are efficiently etched by the post-discharge to get a clean surface after treatment. Thin films are strongly preferentially oriented. But this orientation does not depend on the way the sample is pretreated. The pretreatment can create cracks and modify the etching rate. The etching of the biphenyl occurs by interaction with the singlet state of molecular oxygen O2(a1?g). [4?+?2] cycloaddition is assumed to be the main process leading to ring opening. Next, a large variety of compounds including alcohols, ketones, acids, and aldehydes are created. Atomic oxygen does not seem to play a significant role in the etching process but it functionalizes the biphenyl by creating alcohol groups.

引用

页码：207 / 216

页数：10

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