Low-temperature controllable preparation of vertically standing graphene sheets on indium tin oxide glass and their field emission properties

被引：5

作者：

Zou, Fei ^{[1
]}

Zhou, Haitao ^{[1
]}

Yu, Ning ^{[2
]}

Yao, Zhaohui ^{[2
]}

Liu, Fei ^{[3
]}

Shen, Chengmin ^{[4
]}

机构：

[1] Chinese Aeronaut Estab, Beijing 100012, Peoples R China

[2] Tsinghua Univ, Sch Aerosp Engn, Beijing 100084, Peoples R China

[3] Sun Yat Sen Univ, Sch Phys & Engn, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China

[4] Chinese Acad Sci, Inst Phys, Beijing Key Lab Nanomat & Nanodevices, Beijing 100190, Peoples R China

来源：

CHEMICAL PHYSICS LETTERS | 2016年 / 664卷

基金：

美国国家科学基金会;

关键词：

CVD; Scanning electron microscopy; Glass; Electrical properties; Vertically standing graphene; FEW-LAYER GRAPHENE; TRANSPARENT CONDUCTIVE FILMS; GROWTH; PERFORMANCE; ELECTRONICS; NANOSHEETS; DEVICES;

D O I：

10.1016/j.cplett.2016.09.080

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Vertically standing graphene sheets (VSGs) were successfully grown on indium tin oxide (ITO) glass through plasma enhanced chemical vapor deposition system. The lateral size of the graphene sheets was evidently affected by the growth temperature. The VSGs with smaller sheet size were obtained at 600 degrees C thanat 500 degrees C. The dependence of the field-emission behavior of VSGs grown on ITO glass (VSGs/ITO) on the sheet size was investigated. The VSGs/ITO films with smaller sheet size possessed a higher field-enhancement factor and a lower turn-on field, which was proposed to be attributed to more field-emission sites and better electrical conductivity. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：29 / 32

页数：4

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