Theory of Raman lasing due to coupled intersubband plasmon-phonon modes in asymmetric coupled double quantum wells

被引：0
|
作者：
Maung, SM [1 ]
Katayama, S [1 ]
机构：
[1] Japan Adv Inst Sci & Technol, Sch Mat Sci, Tatsunokuchi, Ishikawa 9231292, Japan
来源：
PHYSICS OF SEMICONDUCTORS, PTS A AND B | 2005年 / 772卷
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D O I：
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A theory of Raman laser gain due to coupled intersubband (ISB) plasmon-optical phonon modes in asymmetric coupled double quantum wells (ACDQWs) is presented. Based on the charge-density-excitations (CDE) mechanism, we take into account the electron-electron and electron-phonon (confined LO phonon and interface (IF) phonons) interactions in the scattering cross-section. For Al0.35Ga0.65As/GaAs ACDQWs the calculated coupled mode energies which are responsible for the lasing Stokes emission are well consistent with recent experiments.
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页码：945 / 946
页数：2
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