Fully dry self-assembly process with proper in-plane orientation

被引:0
|
作者
Park, Sangiun [1 ]
Bohringer, Karl F. [1 ]
机构
[1] Univ Washington, Dept Elect Engn, Seattle, WA USA
关键词
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暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A fully dry self-assembly method for chip-to-wafer stacking is developed in this paper. The assembly elements and substrate have complementary and interlocking features that place the assembly parts in the designated binding sites on the substrate. Proper in-plane orientation is achieved by deploying secondary features on the parts and substrate. These features are fabricated by a series of silicon deep RIE, sidewall passivation coating and isotropic etching. Experimental results show 100% assembly is accomplished on substrates with 2cm diameter, and 95% of assembly is done within 1 minute.
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页码:1077 / 1080
页数:4
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