Stress Formulation in the All-Electron Full-Potential Linearized Augmented Plane Wave Method

被引:5
|
作者
Nagasako, Naoyuki [1 ,2 ]
Oguchi, Tamio [1 ,3 ]
机构
[1] Hiroshima Univ, Dept Quantum Matter, ADSM, Hiroshima 7398530, Japan
[2] Toyota Cent Res & Dev Labs Inc, Aichi 4801192, Japan
[3] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan
关键词
linearized augmented plane wave method; stress tensor; density functional theory; elastic constant; PSEUDOPOTENTIALS; PRESSURE; FORCES; FORMALISM;
D O I
10.1143/JPSJ.80.024701
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Formulation for calculating stress tensors based on the all-electron full-potential linearized augmented plane wave method with the basis functions proposed by Solar and Williams is presented. Validity of the formulation is tested by comparing the pressure obtained as the trace of stress tensor with that estimated from total energies on Si, Al, C, Fe, Cu, W, GaAs, L1(2) Cu3Au, and cubic BaTiO3. Results show that pressure is estimated within the accuracy of less than 0.05 GPa for Al and Si and about 0.1 GPa for the others. Calculations of the shear elastic constant C-44 for Mo, W, and Cu show that the shear components of the stress tensor are also precisely computed with the present formulation.
引用
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页数:13
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