Bias dependent scalable noise models of MESFETs/HEMTs based on neural networks

被引：0
|
作者：
Marinkovic, Z [1 ]
Pronic, O [1 ]
Markovic, V [1 ]
Randelovic, J [1 ]
机构：
[1] Fac Elect Engn, Nish 18000, Serbia Monteneg
来源：
TELSIKS 2005, PROCEEDINGS, VOLS 1 AND 2 | 2005年
关键词：
neural network; MESFET; HEMT; noise parameters; gate width;
D O I：
暂无
中图分类号：
TN [电子技术、通信技术];
学科分类号：
0809 ;
摘要：
A bias-dependent scalable microwave MESFET/HEMT noise model is proposed in this paper. It is based on a multilayer perceptron neural network that produces noise parameters at its outputs for device gate width, biases and frequency presented at its inputs. In that way determination of the noise parameters is enabled for various values of gate width and for all operating points over a wide frequency range. Once the network is trained its structure remains unchanged. After the network training, the noise parameters determination is done without additional optimizations and without need for the measured data that are required for the network training only.
引用
收藏
页码：377 / 380
页数：4
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