Dose rate and total dose dependence of the 1/F noise performance of an operational amplifier fabricated on a complimentary bipolar process on bonded wafer

被引：2

作者：

Hiemstra, DM ^{[1
]}

机构：

[1] SPAR Space Syst, Brampton, ON, Canada

来源：

1998 IEEE RADIATION EFFECTS DATA WORKSHOP | 1998年

关键词：

D O I：

10.1109/REDW.1998.731488

中图分类号：

V [航空、航天];

学科分类号：

08 ; 0825 ;

摘要：

Dose rate and total dose dependence of the 1/f noise performance of an operational amplifier fabricated on a complimentary bipolar process on bonded wafer are presented. Possible noise performance degradation mechanisms are described.

引用

页码：111 / 116

页数：6

共 25 条

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[2] Dose rate and total dose dependence of the 1/f noise performance of a GaAs operational amplifier during irradiation
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