FDTD Implementations of Integrated Dependent Sources in Full-Wave Electromagnetic Simulations

被引：0
|
作者：
ElMahgoub, Khaled [1 ,2 ]
Elsherbeni, Atef Z. [3 ]
机构：
[1] Trimble Nav, Woburn, MA 01801 USA
[2] MIT, Auto ID Labs, Cambridge, MA 02139 USA
[3] Colorado Sch Mines, Dept Elect Engn & Comp Sci, Golden, CO 80401 USA
来源：
APPLIED COMPUTATIONAL ELECTROMAGNETICS SOCIETY JOURNAL | 2014年 / 29卷 / 12期
关键词：
Bipolar Junction Transistor (BJT); Current Controlled Current Source (CCCS); Current Controlled Voltage Source (CCVS); dependent sources; Finite-Difference Time-Domain (FDTD); Voltage Controlled Current Source (VCCS); Voltage Controlled Voltage Source (VCVS); CIRCUITS; FORMULATION;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The implementation of dependent sources such as: Current Controlled Current Source in full-wave electromagnetic simulation using the Finite-Difference Time-Domain method is introduced. This simple new approach is verified with several numerical examples. In one example, the CCCS is used to implement a circuit with Bipolar Junction Transistor. Good agreement is obtained when the results of the developed FDTD code are compared with those based on analytical solution.
引用
收藏
页码：1093 / 1101
页数：9
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