CuIn(Ga)Se2 solar cells:: Characterization of the absorber material

被引：0
|
作者：
Dirnstorfer, I
Wagner, M
Hofmann, DM
Lampert, MD
Karg, F
Meyer, BK
机构：
[1] Univ Giessen, Inst Phys 1, D-35392 Giessen, Germany
[2] Siemens Solar GmbH, D-80807 Munich, Germany
来源：
TERNARY AND MULTINARY COMPOUNDS | 1998年 / 152卷
关键词：
D O I：
暂无
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Optical experiments were carried out on In-rich CuIn(Ga)Se-2 thin films prepared by rapid thermal processing (RTP). The In-rich layers show a single, broad and structurless luminescence band in the spectral range from 0.8 eV to 1.05 eV. The excitation power dependence and the temperature dependence of the recombination are well described by switching over from tail-impurity recombination to band-impurity recombination in a highly compensated semiconductor. The impurity concentrations are determined to be in the 10(18) cm(-3) range, while the carrier concentrations at room temperature are about 10(16) cm(-3).
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页码：233 / 236
页数：4
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