Amorphous Se/CdSe and SiOx/CdSe multilayers

Amorphous multilayers based on Se and CdSe alternated sublayers were succesfully prepared by thermal vacuum evaporation and laser ablation with the periodicity of 22 nm. The multilayer structure is stable up to similar to 70 degrees C. In the samples prepared by laser ablation a large contraction of the multilayer stacking occurs by annealing. Amorphous SiOx/CdSe multilayers with the periodicity of similar to 15 nm were successfully prepared by thermal vacuum evaporation. The structure is stable up to 400 degrees C annealing temperature. Pulse excimer laser irradiation of the SiOx based multilayer produces an expansion of the interlayer distance with similar to 0.33%.