Contact induced spin relaxation in graphene spin valves with Al2O3 and MgO tunnel barriers

被引:29
|
作者
Amamou, Walid [1 ]
Lin, Zhisheng [2 ]
van Baren, Jeremiah [2 ]
Turkyilmaz, Serol [3 ]
Shi, Jing [1 ,2 ]
Kawakami, Roland K. [1 ,2 ,4 ]
机构
[1] Univ Calif Riverside, Program Mat Sci & Engn, Riverside, CA 92521 USA
[2] Univ Calif Riverside, Dept Phys & Astron, Riverside, CA 92521 USA
[3] Univ Calif Riverside, Dept Elect & Comp Engn, Riverside, CA 92521 USA
[4] Ohio State Univ, Dept Phys, 174 W 18th Ave, Columbus, OH 43210 USA
来源
APL MATERIALS | 2016年 / 4卷 / 03期
基金
美国国家科学基金会;
关键词
MAGNETIZATION; PRECESSION; INTERFACES;
D O I
10.1063/1.4943681
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We investigate spin relaxation in graphene by systematically comparing the roles of spin absorption, other contact-induced effects (e.g., fringe fields), and bulk spin relaxation for graphene spin valves with MgO barriers, Al2O3 barriers, and transparent contacts. We obtain effective spin lifetimes by fitting the Hanle spin precession data with two models that include or exclude the effect of spin absorption. Results indicate that additional contact-induced spin relaxation other than spin absorption dominates the contact effect. For tunneling contacts, we find reasonable agreement between the two models with median discrepancy of similar to 20% for MgO and similar to 10% for Al2O3. (C) 2016 Author(s).
引用
收藏
页数:9
相关论文
共 50 条
  • [1] Are Al2O3 and MgO tunnel barriers suitable for spin injection in graphene?
    Dlubak, B.
    Seneor, P.
    Anane, A.
    Barraud, C.
    Deranlot, C.
    Deneuve, D.
    Servet, B.
    Mattana, R.
    Petroff, F.
    Fert, A.
    APPLIED PHYSICS LETTERS, 2010, 97 (09)
  • [2] Contact-Induced Spin Relaxation in Graphene Nonlocal Spin Valves
    Stecklein, Gordon
    Crowell, Paul A.
    Li, Jing
    Anugrah, Yoska
    Su, Qun
    Koester, Steven J.
    PHYSICAL REVIEW APPLIED, 2016, 6 (05):
  • [3] Nanosecond spin relaxation times in single layer graphene spin valves with hexagonal boron nitride tunnel barriers
    Singh, Simranjeet
    Katoch, Jyoti
    Xu, Jinsong
    Tan, Cheng
    Zhu, Tiancong
    Amamou, Walid
    Hone, James
    Kawakami, Roland
    APPLIED PHYSICS LETTERS, 2016, 109 (12)
  • [4] Tunnel spin polarization versus energy for clean and doped Al2O3 barriers
    Park, B. G.
    Banerjee, T.
    Lodder, J. C.
    Jansen, R.
    PHYSICAL REVIEW LETTERS, 2007, 99 (21)
  • [5] Nanosecond spin lifetimes in bottom-up fabricated bilayer graphene spin-valves with atomic layer deposited Al2O3 spin injection and detection barriers
    Droegeler, Marc
    Volmer, Frank
    Wolter, Maik
    Watanabe, Kenji
    Taniguchi, Takashi
    Neumaier, Daniel
    Stampfer, Christoph
    Beschoten, Bernd
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2015, 252 (11): : 2395 - 2400
  • [6] Anomalous nuclear spin–lattice relaxation of 3Не in contact with ordered Al2O3 aerogel
    E. M. Alakshin
    M. Yu. Zakharov
    A. V. Klochkov
    V. V. Kuzmin
    K. R. Safiullin
    A. A. Stanislavovas
    M. S. Tagirov
    JETP Letters, 2016, 104 : 315 - 318
  • [7] Studies of Al2O3 barriers for use in tunnel junctions for nonlocal spin detection experiments
    Abel, J.
    Garramone, J. J.
    Sitnitsky, I. L.
    LaBella, V. P.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2010, 28 (04): : 702 - 705
  • [8] All MgB2 tunnel junctions with Al2O3 or MgO tunnel barriers
    Shim, Heejae
    Yoon, K. S.
    Moodera, J. S.
    Hong, J. P.
    APPLIED PHYSICS LETTERS, 2007, 90 (21)
  • [9] Crystal-induced anisotropy of spin accumulation in Si/MgO/Fe and Si/Al2O3/ferromagnet tunnel devices
    Sharma, S.
    Spiesser, A.
    Saito, H.
    Yuasa, S.
    van Wees, B. J.
    Jansen, R.
    PHYSICAL REVIEW B, 2013, 87 (08)
  • [10] Anisotropy of spin polarization and spin accumulation in Si/Al2O3/ferromagnet tunnel devices
    Sharma, S.
    Dash, S. P.
    Saito, H.
    Yuasa, S.
    van Wees, B. J.
    Jansen, R.
    PHYSICAL REVIEW B, 2012, 86 (16)