Spin effects in InAs quantum dots: Tunneling experiments in tilted magnetic fields

被引:0
|
作者
Meyer, JM [1 ]
Hapke-Wurst, I [1 ]
Zeitler, U [1 ]
Haug, RJ [1 ]
Frahm, H [1 ]
Jansen, AGM [1 ]
Pierz, K [1 ]
机构
[1] Univ Hannover, Inst Festkorperphys, D-30167 Hannover, Germany
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The Lande factor g* of individual InAs quantum dots is measured experimentally by means of magnetotunneling experiments. With the magnetic field applied parallel to the growth direction z we find g(parallel to)(*) = 0.7... 0.9 for different dots investigated. When B is tilted away from z by an angle v an increase of g* following a phenomenological behavior g*(v) = root (g(parallel to)(*) cosv)(2) + (g(perpendicular to)(*) sinv)(2) is observed. In high magnetic fields where only the lowest Landau level in the three-dimensional emitter is occupied a strong enhancement of the resonant current is observed. These results are discussed in terms of a field-induced Fermi-edge singularity.
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页码:845 / 846
页数:2
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