Nanophotonic Devices Based on Semiconductor Quantum Nanostructures

被引:0
|
作者
Komori, Kazuhiro [1 ]
Sugaya, Takeyoshi [1 ]
Amano, Takeru [1 ]
Goshima, Keishiro [2 ]
机构
[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan
[2] Aichi Inst Technol, Toyota 4700392, Japan
来源
IEICE TRANSACTIONS ON ELECTRONICS | 2016年 / E99C卷 / 03期
基金
日本科学技术振兴机构;
关键词
nanophotonic devices; quantum nanostructures; quantum dots; semiconductor lasers; solar cell devices; quantum information devices; MU-M; HIGH-DENSITY; SINGLE PAIR; DOT LASER; THRESHOLD; EFFICIENCY; EXCITONS; GROWTH;
D O I
10.1587/transele.E99.C.346
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this study, our recent research activities on nanophotonic devices with semiconductor quantum nanostructures are reviewed. We have developed a technique for nanofabricating of high-quality and high-density semiconductor quantum dots (QDs). On the basis of this core technology, we have studied next-generation nanophotonic devices fabricated using high-quality QDs, including (1) a high-performance QD laser for long-wavelength optical communications, (2) high-efficiency compound-type solar cell structures, and (3) single-QD devices for future applications related to quantum information. These devices are expected to be used in high-speed optical communication systems, high-performance renewable energy systems, and future high-security quantum computation and communication systems.
引用
收藏
页码:346 / 357
页数:12
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