Transient observation of extended x-ray absorption fine structure in laser-melted Si by using femtosecond laser-produced-plasma soft x ray

被引：17
|
作者：
Oguri, K [1 ]
Okano, Y [1 ]
Nishikawa, T [1 ]
Nakano, H [1 ]
机构：
[1] NTT COrp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
来源：
APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 01期
关键词：
D O I：
10.1063/1.1989445
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have demonstrated the time-resolved measurement of the extended x-ray absorption fine structure (EXAFS) in laser-melted Si foil by using a pump-probe absorption spectroscopy system that utilizes a femtosecond laser-produced-plasma soft x-ray source. By using 100-fs laser irradiation, we observed the transient change in the Si L-edge EXAFS, that is, a slight shortening of its oscillation period and a decrease in its oscillation amplitude. This result suggests that the Si-Si atomic distance expanded and structural disordering occurred as a result of the production of liquid Si. (c) 2005 American Institute of Physics.
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