Built-in electric field effect on optical absorption spectra of strained (In, Ga)N-GaN nanostructures

被引：14
|
作者：
El Ghazi, Haddou [1 ,2 ]
Peter, A. John [3 ]
机构：
[1] LPS, Fac Sci, Fes, Morocco
[2] CPGE Rabat, Special Math, Rabat, Morocco
[3] Govt Arts & Sci Coll, Dept Phys, Madurai 625106, Tamil Nadu, India
来源：
PHYSICA B-CONDENSED MATTER | 2015年 / 470卷
关键词：
Built-in internal field; Optical properties; Quantum dot; ACs; SPHERICAL QUANTUM DOTS; HYDROGENIC IMPURITY; DONOR IMPURITY; TRANSITION; EXCITONS; WELLS;
D O I：
10.1016/j.physb.2015.04.028
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Based on the effective-mass and the one band parabolic approximations, first order linear, third-order nonlinear and total optical properties related to 1s-1p intra-conduction band transition in wurtzite strained (In,Ga)N-GaN spherical QDs are calculated. The built-in electric field effect, due to the spontaneous and piezoelectric components, is investigated variationally under finite confinement potential. The results reveal that size and internal composition of the dot have a great influence on in-built electric field which affects strongly the optical absorption spectra. It is also found that the modulation of the absorption coefficient, which is suitable for the better performance of optical device applications, can be easily obtained by adjusting geometrical size and internal composition. (C) 2015 Elsevier B.V. All rights reserved
引用
收藏
页码：64 / 68
页数：5
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