Gigabit photodiodes in standard digital nanometer CMOS technologies

被引：2
|
作者：
Hermans, C [1 ]
Leroux, P [1 ]
Steyaert, M [1 ]
机构：
[1] Katholieke Univ Leuven, MICAS, ESAT, B-3001 Louvain, Belgium
来源：
ESSDERC 2003: PROCEEDINGS OF THE 33RD EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE | 2003年
关键词：
D O I：
10.1109/ESSDERC.2003.1256808
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A study of the performance of photodiodes in a fully standard sub 0.1mum technology is presented. A one-dimensional model is developed to get a rough idea of speed and responsivity of the detectors. Next, two-dimensional simulations of two basic unit cells are performed The importance of the side-wall capacitance of a junction is demonstrated, and a clear trade-off between speed and responsivity is shown. According to simulations, the nwell diode can achieve a bitrate of 200Mbit/s and a responsivity of 0.36A/W. By considering also the p(+) to nwell junction, a bitrate of 1Gbit/s and a responsivity of 0.08A/W can be achieved Finally, the layout issues of different test diodes are discussed.
引用
收藏
页码：51 / 54
页数：4
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