A study on the graphene incorporated direct-patternable SnO2 thin film

被引:4
|
作者
Kim, Hyuncheol [1 ]
Yun, Min-Kyung [1 ]
Park, Hyung-Ho [1 ]
机构
[1] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea
关键词
direct-patterning; graphene; SnO2 thin films; transparent conducting oxide; TRANSPARENT; NANOPARTICLES;
D O I
10.1002/pssa.201026770
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The electrical property of direct-patternable SnO2 thin film was improved by the incorporation of graphene. Graphene were incorporated into SnO2 photosensitive solution and the direct-patternable film was prepared by photochemical solution deposition. The incorporation of graphene into SnO2 films slightly reduced the transmittance of the films due to light scattering by the incorporated graphene. In addition, with incorporation of graphene, the crystallinity of the SnO2 thin films was decreased slightly and the resistivity was improved due to an enhancement of mobility because of the pi-bond nature of surface on graphene. Direct-patterning of graphene incorporated SnO2 thin films was performed without photoresist or etching process. These results suggest that a micropatterned system can be simply fabricated at a low cost and the electrical properties of SnO2 films can be improved by incorporating graphene. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码:1869 / 1872
页数:4
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