One dimensional electron gas at the LaAlO3/SrTiO3 interface and its transport properties

被引：5
|
作者：
Hong, D. S. [1 ,2 ]
Zhang, H. [1 ,2 ]
Zhang, H. R. [1 ,2 ]
Zhang, J. [1 ,2 ]
Wang, S. F. [3 ]
Chen, Y. S. [1 ,2 ]
Shen, B. G. [1 ,2 ]
Sun, J. R. [1 ,2 ]
机构：
[1] Chinese Acad Sci, Beijing Natl Lab Condensed Matter, Beijing 100190, Peoples R China
[2] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China
[3] Hebei Univ, Coll Phys Sci & Technol, Baoding 071002, Hebei Province, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2016年 / 109卷 / 17期
基金：
中国国家自然科学基金;
关键词：
HETEROSTRUCTURES; OXIDES; FERROMAGNETISM;
D O I：
10.1063/1.4966546
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Quasi-one-dimensional electron gases (q1DEGs) have been obtained by fabricating LaAlO3 nanowires, using the technique of electrostatic spinning plus post annealing, above TiO2-terminated SrTiO3 substrate. The q1DEG exhibits an electronic transport behavior of variable range hopping with the one dimension characteristic. Visible light illumination produces a strong effect on transport process, depressing the resistance of the q1DEG by a factor up to 8. As expected, gating effect is weak at relative high temperatures, similar to 3.2% at 150K and 1.5% at 300K under a back gate of 200 V. Aided by light illumination, however, the gating effect is 35-fold amplified, and the resistance increases under not only negative gates but also positive gates, different from the normal gating effect without illumination. Possible explanations for these phenomena are given. Published by AIP Publishing.
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页数：5
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