THE EFFECT OF XE ION AND NEUTRON IRRADIATION ON THE PROPERTIES OF SIC AND SIC(N) FILMS PREPARED BY PECVD TECHNOLOGY

被引：0

作者：

Huran, Jozef ^{[1
]}

Hrubcin, Ladislav ^{[1
,2
]}

Bohaceki, Pavel ^{[1
]}

Borzakov, Sergey B. ^{[2
]}

Skuratov, Vladimir A. ^{[2
]}

Kobzev, Alexander P. ^{[2
]}

Kleinova, Angela ^{[3
]}

Sasinkova, Vlasta ^{[4
]}

机构：

[1] Slovak Acad Sci, Inst Elect Engn, Dubravska Cesta 9, Bratislava 84104, Slovakia

[2] Joint Inst Nucl Res, Dubna 141980, Russia

[3] Slovak Acad Sci, Inst Polymer, Bratislava 84541, Slovakia

[4] Slovak Acad Sci, Inst Chem, Bratislava 84538, Slovakia

来源：

RAD 2015: THE THIRD INTERNATIONAL CONFERENCE ON RADIATION AND APPLICATIONS IN VARIOUS FIELDS OF RESEARCH | 2015年

关键词：

SiC film; PECVD; Xe ion and neutron irradiation; structural and electrical characterization; CHEMICAL-VAPOR-DEPOSITION;

D O I：

暂无

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

Silicon carbide (SiC) and nitrogen-doped silicon carbide (SiC(N)) films were deposited on p-type Si(100) substrates at various deposition conditions by means of plasma enhanced chemical vapor deposition (PECVD) technology using silane (SiH4) methane (CH4) and ammonium (NH3) gas precursors. The concentration of elements in films was determined by RBS and ERD analytical method simultaneously. Chemical compositions were analyzed by FT-IR and Raman spectroscopy. The current-voltage (I-V) characteristics of structures before and after Xe ion and neutron irradiation were measured.

引用

页码：399 / 403

页数：5

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