Wide Optical and RF Bandwidth Thin Film Lithium Niobate Modulator on Silicon

被引:0
|
作者
Chakravarty, Swapnajit [1 ]
Safian, Reza [1 ]
Zhuang, Leimeng [1 ]
机构
[1] IMEC USA, 194 Neoc Way, Kissimmee, FL 34744 USA
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We propose a bonding interface fabrication tolerant silicon nitride capped thin film lithium niobate on silicon modulator that operates with RF bandwidths >200 GHz in C- and Obands and V pi L 4V-cm and 3V-cm respectively. (c) 2021 The Author(s)
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页数:2
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