Photocurrent spectral distribution and relaxation in CdS/CdTe heterojunctions

被引：0
|
作者：
Vatavu, Sergiu A. [1 ]
Gasin, Petru A. [1 ]
Ferekides, Chris S. [2 ]
Caraman, Iuliana M. [3 ]
机构：
[1] Moldova State Univ, 60 A Mateevici Str, Kishinev 2009, MD, Moldova
[2] Univ S Florida, Dept Elect Engn, Tampa, FL 33620 USA
[3] Univ Bacau, Engn, R-600115 Bacau, Romania
来源：
THIN-FILM COMPOUND SEMICONDUCTOR PHOTOVOLTAICS - 2007 | 2007年 / 1012卷
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中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The analysis of the photoelectrical processes in CdS/CdTe heterojunction is carried out by means of photocurrent spectral distribution studies for samples, having CdTe thicknesses in the 2.3-6.6 mu m range (short-circuit and biased regime). The measurement have been performed in the 78-293K temperature range. The charge carriers lifetime is determined (varying from 12 mu s to 280 mu s at 293K).
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页码：189 / +
页数：2
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