Effect of dielectrics on hydrogen detection sensitivity of metal-insulator-semiconductor Pt-GaN diodes

被引：22
|
作者：
Irokawa, Yoshihiro [1 ]
Sakuma, Yoshiki [1 ]
Sekiguchi, Takashi [1 ]
机构：
[1] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2007年 / 46卷 / 12期
关键词：
GaN; SiO2; SixNy; MIS; diode; hydrogen; sensor;
D O I：
10.1143/JJAP.46.7714
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The hydrogen responses of metal-insulator-semiconductor (MIS) Pt-GaN diodes are compared. MIS Pt-GaN diodes with a 10 nm SiO2 dielectric, deposited by RF sputtering, show a marked improvement in hydrogen detection sensitivity, which is twice higher than that of conventional Pt-GaN Schottky diodes. In sharp contrast, MIS Pt-GaN diodes with a 10 nm SixNy dielectric, deposited by RF sputtering, do not show any hydrogen response.
引用
收藏
页码：7714 / 7716
页数：3
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