Mechanism of TiN barrier-metal oxidation in a ferroelectric random access memory

被引：3

作者：

Kushida-Abdelghafar, K ^{[1
]}

Torii, K ^{[1
]}

Takatani, S ^{[1
]}

Matsui, Y ^{[1
]}

Fujisaki, Y ^{[1
]}

机构：

[1] Hitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 185, Japan

来源：

JOURNAL OF MATERIALS RESEARCH | 1998年 / 13卷 / 11期

关键词：

D O I：

10.1557/JMR.1998.0443

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In the stacked structure of PbZr1-xTixO3(PZT)/Pt/TiN/poly-Si for a ferroelectric random access memory (RAM), the mechanism of TiN barrier-metal oxidation was investigated by transmission electron microscopy (TEM). In the cross-sectional TEM images of PZT/Pt/TiN/Si, titanium oxide was observed beneath the Pt grain boundary. The oxygen was diffused through the Pt grain boundary during the heat treatment in an oxygen atmosphere for crystallization of PZT films. The annealing of the TiN film in ammonia resulted in the suppression of the oxidation during the crystallization annealing of PZT. The minimum required Pt film thickness to protect TiN from oxidation can be reduced from 200 nm to 100 nm.

引用

页码：3265 / 3269

页数：5

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