Compact E-Band I/Q Receiver in SiGe BiCMOS for 5G Backhauling Applications

被引：9
|
作者：
Amendola, Giandomenico [1 ]
Boccia, Luigi [1 ]
Centurelli, Francesco [2 ]
Chevalier, Pascal [3 ]
Fonte, Alessandro [4 ]
Mustacchio, Carmine [1 ]
Pallotta, Andrea [5 ]
Tommasino, Pasquale [2 ]
Traversa, Antonio [4 ]
Trifiletti, Alessandro [2 ]
机构：
[1] Univ Calabria, Dipartimento Ingn Informat Modellist Elettron & S, I-87036 Arcavacata Di Rende, Italy
[2] Sapienza Univ Rome, Informat Engn Elect & Telecommun Dept, I-00184 Rome, Italy
[3] STMicroelectronics, TR&D Dept, F-38920 Crolles, France
[4] SIAE MICROELETTRON, R&D Dept, I-20093 Cologno Monzese, Italy
[5] STMicroelectronics, MDG RFC Dept, I-20010 Cornaredo, Italy
来源：
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS | 2021年 / 68卷 / 09期
基金：
欧盟地平线“2020”;
关键词：
Receivers; Silicon germanium; BiCMOS integrated circuits; Gain; Mixers; Linearity; Attenuation; Backhaul; E-band; point to point communication; SiGe; wideband receiver front-end;
D O I：
10.1109/TCSII.2021.3096817
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The implementation of backhauling links poses several challenges to the designers which are requested to limit the hardware costs in the framework of complex millimeter wave radio systems. This work presents a monolithically integrated E-band I/Q receiver covering the whole bandwidth from 71 to 86 GHz. The chip was implemented in a 55 nm SiGe BiCMOS technology which allows reaching a high level of integration. The receiver is based on a Low Noise Amplifier (LNA) stage and a Variable-Gain Amplifier (VGA) which provide a -11 dBm IP1dB. A double balanced mixer provides I/Q baseband outputs through a reduced-size differential phase shifter which allows to contain the chip size to 1.8 mm(2).
引用
收藏
页码：3098 / 3102
页数：5
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