Topologically induced fractional Hall steps in the integer quantum Hall regime of MoS2

被引：3

作者：

Islam, S. K. Firoz ^{[1
]}

Benjamin, Colin ^{[1
]}

机构：

[1] Natl Inst Sci Educ & Res, Bhubaneswar 751005, Orissa, India

来源：

NANOTECHNOLOGY | 2016年 / 27卷 / 38期

关键词：

quantum Hall effect; spintronics; valleytronics; fractional step; VALLEY POLARIZATION; PHASE;

D O I：

10.1088/0957-4484/27/38/385203

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The quantum magnetotransport properties of a monolayer of molybdenum disulfide are derived using linear response theory. In particular, the effect of topological terms on longitudinal and Hall conductivity is analyzed. The Hall conductivity exhibits fractional steps in the integer quantum Hall regime. Further complete spin and valley polarization of the longitudinal conductivitity is seen in presence of these topological terms. Finally, the Shubnikov-de Hass oscillations are suppressed or enhanced contingent on the sign of these topological terms.

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页数：11

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