Tuning the Band Gap in the Halide Perovskite CsPbBr3 through Sr Substitution

被引:34
|
作者
Straus, Daniel B. [1 ]
Cava, Robert J. [1 ]
机构
[1] Princeton Univ, Dept Chem, Princeton, NJ 08544 USA
关键词
perovskite; doping; solid solution; band gap; semiconductor; absorption; photoluminescence; stability; CH3NH3PBI3; STATE; DIFFUSION; LIFETIME; PB; SN; BR; CL;
D O I
10.1021/acsami.2c09275
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The ability to continuously tune the band gap of a semiconductor allows its optical properties to be precisely tailored for specific applications. We demonstrate that the band gap of the halide perovskite CsPbBr3 can be continuously widened through homovalent substitution of Sr2+ for Pb2+ using solid-state synthesis, creating a material with the formula CsPb1-xSrxBr3 (0 <= x <= 1). Sr2+ and Pb2+ form a solid solution in CsPb1-xSrxBr3. Pure CsPbBr3 has a band gap of 2.29(2) eV, which increases to 2.64(3) eV for CsPb0.25Sr0.75Br3. The increase in band gap is clearly visible in the color change of the materials and is also confirmed by a shift in the photoluminescence. Density-functional theory calculations support the hypothesis that Sr incorporation widens the band gap without introducing mid-gap defect states. These results demonstrate that homovalent B-site alloying can be a viable method to tune the band gap of simple halide perovskites for absorptive and emissive applications such as color-tunable light-emitting diodes, tandem solar cells, and photodetectors.
引用
收藏
页码:34884 / 34890
页数:7
相关论文
共 50 条
  • [1] Tuning the Band Gap in the Halide Perovskite CsPbBr3through Sr Substitution
    Straus, Daniel B.
    Cava, Robert J.
    ACS Applied Materials and Interfaces, 2022, 14 (30): : 34884 - 34890
  • [2] Excitons in CsPbBr3 Halide Perovskite
    Peters, J. A.
    Liu, Z.
    Bulgin, O.
    He, Y.
    Klepov, V. V.
    De Siena, M. C.
    Kanatzidis, M. G.
    Wessels, B. W.
    JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2021, 12 (38): : 9301 - 9307
  • [3] Invalidity of Band-Gap Engineering Concept for Bi3+ Heterovalent Doping in CsPbBr3 Halide Perovskite
    Lozhkina, Olga A.
    Murashkina, Anna A.
    Shilovskikh, Vladimir V.
    Kapitonov, Yury, V
    Ryabchuk, Vladimir K.
    Emeline, Alexei, V
    Miyasaka, Tsutomu
    JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2018, 9 (18): : 5408 - 5411
  • [4] Origin of the Nonmonotonic Pressure Dependence of the Band Gap in the Orthorhombic Perovskite CsPbBr3
    Chen, Zehua
    Teng, Gaofeng
    Wei, Su-Huai
    JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2024, 15 (06): : 1652 - 1657
  • [5] Tuning optical properties of CsPbBr3 perovskite nanocrystals through silver doping
    B. Gopal Krishna
    Dhriti Sundar Ghosh
    Sanjay Tiwari
    Journal of Materials Science: Materials in Electronics, 2022, 33 : 1324 - 1336
  • [6] Tuning optical properties of CsPbBr3 perovskite nanocrystals through silver doping
    Krishna, B. Gopal
    Ghosh, Dhriti Sundar
    Tiwari, Sanjay
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2022, 33 (03) : 1324 - 1336
  • [7] Effect of bismuth substitution for lead in CsPbBr3 perovskite
    Elizarov, M. V.
    Lozkina, O. V.
    Yeletz, D. I.
    Emeline, A. V.
    Ryabchuk, V. K.
    Murashkina, A. A.
    19TH RUSSIAN YOUTH CONFERENCE ON PHYSICS OF SEMICONDUCTORS AND NANOSTRUCTURES, OPTO- AND NANOELECTRONICS, 2018, 993
  • [8] Bandgap Engineering of Cesium Lead Halide Perovskite CsPbBr3 through Cu Doping
    Wu, Qiaoqian
    Li, Jinping
    Xue, Shaoming
    Zhao, Yiting
    Liu, Fangchao
    Huo, Qiuhong
    Mi, Jun
    Guan, ChengBo
    Cong, Wei-Yan
    Lu, Ying-Bo
    Ren, Junfeng
    ADVANCED THEORY AND SIMULATIONS, 2022, 5 (10)
  • [9] High Defect Tolerance in Lead Halide Perovskite CsPbBr3
    Kang, Jun
    Wang, Lin-Wang
    JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2017, 8 (02): : 489 - 493
  • [10] Thermal and chemical durability of metal halide perovskite CsPbBr3 single crystals
    Han, Daniu
    Yang, Kun
    Bai, Chengying
    Chen, Feida
    Sun, Zhangjie
    Wang, Yibo
    Ji, Hao
    Yang, Zhou
    Tang, Xiaobin
    CHEMICAL ENGINEERING JOURNAL, 2023, 475