Oxide electronics for 5G and 6G

被引：5
|
作者：
Kyriacou, George A. [1 ]
机构：
[1] Democritus Univ Thrace, Dept Elect & Comp Engn, Xanthi, Greece
来源：
NATURE ELECTRONICS | 2021年 / 4卷 / 10期
关键词：
7;
D O I：
10.1038/s41928-021-00659-w
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Large-area electronics based on metal-oxide thin-film transistors can be used to create integrated phased arrays for radiofrequency front-ends in 5G - and future 6G - communication systems.
引用
收藏
页码：705 / 706
页数：2
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