Electrical Characteristics and Stability of Pentacene Field-Effect Transistors in Air Using HfO2 as a Gate Insulator

被引：0
|
作者：
Akhtaruzzaman, Md [1 ]
Ohmi, Shun-Ichiro [1 ]
Ishiwara, Hiroshi [1 ]
机构：
[1] King Saud Univ, Coll Engn, BRCES, Riyadh, Saudi Arabia
来源：
PHYSICS AND TECHNOLOGY OF ORGANIC SEMICONDUCTOR DEVICES | 2010年 / 1115卷
关键词：
THIN-FILM TRANSISTORS; SEMICONDUCTOR-DEVICES;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A top-contact type pentacene-based thin film transistor was fabricated using HfO2 as a gate insulator. The HfO2 of 12 nm thick was deposited on SiO2/n(+)-Si substrate by ECR (electron cyclotron resonance) sputtering at Ar/O-2 (20:4 seem) ambient. All of the electrical measurements were performed in ex-situ process. The device thus fabricated showed excellent electrical performance with high hole mobility of 0.5 cm(2)V(-1)s(-1) and on/off ratio of 10(4). The devices were found to be remarkably stable for as long as 20 days in air.
引用
收藏
页码：59 / 67
页数：9
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