Performance Comparison of O-based and Cu-based ReRAM for High-Density Applications

被引:0
|
作者
Calderoni, Alessandro [1 ]
Sills, Scott [1 ]
Ramaswamy, Nirmal [1 ]
机构
[1] Micron Technol Inc, Boise, ID 83706 USA
关键词
Resistive memory; Oxygen vacancy; Conductive bridge; Endurance; Noise; Variability; Retention;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The resistive switching memory (ReRAM) landscape encompasses several cell technology options. Filamentary systems that employ oxygen ion motion (O-ReRAM) or metal ion motion (M-ReRAM) and systems that employ uniform oxygen ion motion are being widely studied as potential candidates for next generation of non-volatile memory systems (NVM). While comparisons between different systems have been made at single-cell level, enabling a future NVM technology mandates an evaluation of a statistically significant population of bits. This paper presents an array-level comparison of two filamentary systems: O-ReRAM and Cu ion based M-ReRAM. The key factors for enabling a manufacturable product are compared, such as read window, noise, variability, endurance and retention.
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页数:4
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