Intrinsic Capacitance Characteristics of Top-Contact Organic Thin-Film Transistors

被引：13

作者：

Kim, Kangmin ^{[1
]}

Kim, Youngmin ^{[2
]}

机构：

[1] Samsung Elect, Asan, South Korea

[2] Hongik Univ, Sch Elect & Elect Engn, Seoul 121791, South Korea

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2010年 / 57卷 / 09期

关键词：

Overlap capacitance of source/drain (S/D); pentacene organic thin-film transistor (OTFT); PENTACENE;

D O I：

10.1109/TED.2010.2055312

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present the intrinsic capacitance characteristics of a pentacene-based polystyrene-gate organic thin-film transistor (OTFT). Intrinsic capacitance values (C(GD), C(GS)) at each terminal of the OTFT were experimentally measured for various frequencies and dc bias voltages. The measured results illustrate that the intrinsic capacitance of an OTFT can be understood by considering a charge control mechanism, suggesting the validity of Meyer's capacitance model for the charge storage effect of OTFTs.

引用

页码：2344 / 2347

页数：4

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