Spin current, spin accumulation and spin Hall effect

被引：134
|
作者：
Takahashi, Saburo [1 ,2 ]
Maekawa, Sadamichi [1 ,2 ,3 ]
机构：
[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
[2] Japan Sci & Technol Agcy, CREST, Kawaguchi, Saitama 3320012, Japan
[3] Norwegian Acad Sci & Letters, Ctr Adv Study, N-0271 Oslo, Norway
来源：
SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS | 2008年 / 9卷 / 01期
关键词：
spin polarized transport; spin injection; spin accumulation; spin current; spin detection; spin Hall effect; spin-orbit interaction; spin diffusion length;
D O I：
10.1088/1468-6996/9/1/014105
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Nonlocal spin transport in nanostructured devices with ferromagnetic injector (F1) and detector (F2) electrodes connected to a normal conductor (N) is studied. We reveal how the spin transport depends on interface resistance, electrode resistance, spin polarization and spin diffusion length, and obtain the conditions for efficient spin injection, spin accumulation and spin current in the device. It is demonstrated that the spin Hall effect is caused by spin-orbit scattering in nonmagnetic conductors and gives rise to the conversion between spin and charge currents in a nonlocal device. A method of evaluating spin-orbit coupling in nonmagnetic metals is proposed.
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收藏
页数：11
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