Synthesis and properties of CuO-doped Ce0.9Gd0.1O2-δ electrolytes for SOFCs

被引:52
|
作者
Lima, Chrystian G. M. [1 ]
Santos, Thamyscira H. [1 ]
Grilo, Joao P. F. [2 ]
Dutra, Ricardo P. S. [1 ]
Nascimento, Rubens M. [2 ]
Rajesh, Surendran [3 ]
Fonseca, Fabio C. [4 ]
Macedo, Daniel A. [1 ]
机构
[1] Univ Fed Paraiba, Mat Sci & Engn Postgrad Program, BR-58051900 Joao Pessoa, Paraiba, Brazil
[2] Univ Fed Rio Grande do Norte, Mat Sci & Engn Postgrad Program, BR-59078970 Natal, RN, Brazil
[3] Univ Aveiro, Dept Mat & Ceram Engn CICECO, P-3810193 Aveiro, Portugal
[4] IPEN, Energy & Nucl Res Inst, BR-05508900 Sao Paulo, Brazil
关键词
Gadolinia-doped ceria; Sintering aid; Microstructure; Electrical conductivity; SINTERING AID; CEO2; CONDUCTIVITY; TRANSPORT; SIZE; GDC;
D O I
10.1016/j.ceramint.2014.12.093
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The effects of copper oxide (CuO) addition on the crystal structure, densification and microstructure of Gd-doped ceria (Ce0.9Gd0.1O2-delta, CGO) synthesized by the polymeric precursor method have been studied. Ce0.9-xGd0.1CUxO2-delta (0 <= X <= 0.01) precursor powders were calcined at 600 degrees C for 1 h and the phase formation was studied by powder X-ray diffraction combined with Rietveld refinement analysis. Relative density measurements and microstructural analysis were performed on pellets sintered in the temperature range 1000-1100 degrees C in air. The effect of CuO as a sintering aid becomes more visible when its content is in the 0.5-1 mol% range where the relative densities are found to be 98% for sintering temperature as low as 1000 degrees C. A remarkable reduction (up to similar to 500 degrees C) in the sintering temperature for 1 mol% CuO-doped CGO ceramics is observed together with the formation of a dissolved phase of Gd2O3-CeO2-CuO. Ce0.89Gd0.1Cu0.01-yO2-delta sintered at 1000 degrees C shows total electrical conductivity of 15.5 mS cm(-1) at 600 degrees C slightly higher than Ce0.9Gd0.1O2-delta sintered at 1500 degrees C (12.4 mS cm(-1)). (C) 2014 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
引用
收藏
页码:4161 / 4168
页数:8
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