THz generation from a nanocrystalline silicon-based photoconductive device

被引：9

作者：

Daghestani, N. S. ^{[1
]}

Persheyev, S. ^{[1
]}

Cataluna, M. A. ^{[1
]}

Ross, G. ^{[2
]}

Rose, M. J. ^{[1
]}

机构：

[1] Univ Dundee, Carnegie Lab Phys, Sch Engn Phys & Math, Dundee DD1 4HN, Scotland

[2] NCR FSG Ltd, Discovery Ctr, Dundee DD2 4SW, Scotland

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2011年 / 26卷 / 07期

关键词：

SEMIINSULATING GAAS; FILMS; DEPOSITION; HWCVD; PECVD; CVD;

D O I：

10.1088/0268-1242/26/7/075015

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Terahertz generation has been achieved from a photoconductive switch based on hydrogenated nanocrystalline silicon (nc-Si:H), gated by a femtosecond laser. The nc-Si:H samples were produced by a hot wire chemical vapour deposition process, a process with low production costs owing to its higher growth rate and manufacturing simplicity. Although promising ultrafast carrier dynamics of nc-Si have been previously demonstrated, this is the first report on THz generation from a nc-Si:H material.

引用

页数：5

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