Lithography-free fabrication of carbon nanotube network transistors

被引:16
|
作者
Timmermans, Marina Y. [1 ,2 ]
Grigoras, Kestutis [3 ]
Nasibulin, Albert G. [1 ,2 ]
Hurskainen, Ville [4 ]
Franssila, Sami [3 ]
Ermolov, Vladimir [4 ]
Kauppinen, Esko I. [1 ,2 ]
机构
[1] Aalto Univ Sch Sci & Technol, Dept Appl Phys, NanoMat Grp, Aalto 00076, Finland
[2] Aalto Univ Sch Sci & Technol, Ctr New Mat, Aalto 00076, Finland
[3] Aalto Univ Sch Sci & Technol, Dept Mat Sci & Engn, Microfabricat Grp, Aalto 00076, Finland
[4] Nokia Res Ctr, Helsinki 00180, Finland
基金
芬兰科学院;
关键词
FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; EMISSION DISPLAY; DEPOSITION; GROWTH; ARRAYS; FERROCENE;
D O I
10.1088/0957-4484/22/6/065303
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A novel non-lithographic technique for the fabrication of carbon nanotube thin film transistors is presented. The whole transistor fabrication process requires only one mask which is used both to pattern transistor channels based on aerosol synthesized carbon nanotubes and to deposit electrodes by metal evaporation at different angles. An important effect of electrodynamic focusing was utilized for the directed assembly of transistor channels with feature sizes smaller than the mask openings. This dry non-lithographic method opens up new avenues for device fabrication especially for low cost flexible and transparent electronics.
引用
收藏
页数:6
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