10 Gbit s-1 electroabsorption-modulated laser light-source module using selective area MOVPE

被引:1
|
作者
Li, BX [1 ]
Zhu, HL [1 ]
Zhang, J [1 ]
Zhao, Q [1 ]
Pian, JQ [1 ]
Ding, Y [1 ]
Wang, BJ [1 ]
Bian, J [1 ]
Zhao, LJ [1 ]
Wang, W [1 ]
机构
[1] Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China
关键词
D O I
10.1088/0268-1242/20/9/005
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A distributed-feedback (DFB) laser and a high-speed electroabsorption (EA) modulator are integrated, on the basis of the selective area MOVPE growth (SAG) technique and the ridge waveguide structure, for a 10 Gbit s(-1) optical transmission system. The integrated DFB laser/EA modulator device is packaged in a compact module with a 20% optical coupling efficiency to the single-mode fibre. The typical threshold current is 15 mA, and the side-mode suppression ratio is over 40 dB with the single-mode operation at 1550 nm. The module exhibits 1.2 mW fibre output power at a laser gain current of 70 mA and a modulator bias voltage of 0 V. The 3 dB bandwidth is 12 GHz. A dynamic extinction ratio of over 10 dB has been successfully achieved under 10 Gbit s(-1) non-return to zero (NRZ) operation, and a clearly open eye diagram is obtained.
引用
收藏
页码:917 / 920
页数:4
相关论文
共 44 条
  • [1] Electroabsoorption-modulated laser light-source module using selective area growth for 10 Gb/s transmission
    Zhao, Q
    Pan, JQ
    Zhang, J
    Li, BX
    Zhou, F
    Wang, BJ
    Wang, LF
    Bian, J
    Zhao, LJ
    Wang, W
    [J]. ACTA PHYSICA SINICA, 2006, 55 (03) : 1259 - 1263
  • [2] Selective-area MOVPE growth for 10 Gbit/s electroabsorption modulator integrated with a tunable DBR laser
    Kim, Sung-Bock
    Sim, Jae-Sik
    Kim, Ki Soo
    Sim, Eun-Deok
    Ryu, Sang-Wan
    Park, Hong Lee
    [J]. JOURNAL OF CRYSTAL GROWTH, 2007, 298 : 672 - 675
  • [3] Wavelength division multiplexed (WDM) electroabsorption modulated laser fabricated by selective area growth MOVPE techniques
    TanbunEk, T
    Fang, W
    Bethea, C
    Sciortino, PF
    Sergent, AM
    Wisk, P
    People, R
    Chu, SNG
    Pawelek, R
    Tsang, WT
    Tennant, D
    Feder, K
    Koren, U
    [J]. OPTOELECTRONIC INTEGRATED CIRCUITS, 1997, 3006 : 196 - 206
  • [4] Improved NRZ transmission distance at 20 Gbit/s using dual electroabsorption modulated laser
    Kechaou, K.
    Anfray, T.
    Merghem, K.
    Aupetit-Berthelemot, C.
    Aubin, G.
    Kazmierski, C.
    Jany, C.
    Chanclou, P.
    Erasme, D.
    [J]. ELECTRONICS LETTERS, 2012, 48 (06) : 335 - U100
  • [5] Very high-speed light-source module up to 40 Gb/s containing an MQW electroabsorption modulator integrated with a DFB laser
    Takeuchi, Hiroaki
    Tsuzuki, Ken
    Sato, Kenji
    Yamamoto, Mitsuo
    Itaya, Yoshio
    Sano, Akihide
    Yoneyama, Mikio
    Otsuji, Taiichi
    [J]. IEEE Journal on Selected Topics in Quantum Electronics, 1997, 3 (02): : 336 - 343
  • [6] Very high-speed light-source module up to 40 Gb/s containing an MQW electroabsorption modulator integrated with a DFB laser
    Takeuchi, H
    Tsuzuki, K
    Sato, K
    Yamamoto, M
    Itaya, Y
    Sano, A
    Yoneyama, M
    Otsuji, T
    [J]. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1997, 3 (02) : 336 - 343
  • [7] 40-Gb/s RZ transmission over 1200 km using an integrated electroabsorption-modulated laser
    Su, Y
    Raybon, G
    Feng, H
    Wei, X
    Makino, T
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2003, 15 (08) : 1156 - 1158
  • [8] Low chirp electroabsorption-modulated DFB laser fabricated by combining selective-area growth and double-stack active layer techniques
    Deng, Qiufang
    Liang, Song
    Zhu, Hongliang
    Xie, Xiao
    Guo, Lu
    Sun, Siwei
    Wang, Wei
    [J]. INTEGRATED OPTICS: DEVICES, MATERIALS, AND TECHNOLOGIES XXII, 2018, 10535
  • [9] Operation of 1550-nm electroabsorption-modulated laser at 40°C for 10-Gb/s, 40-km transmission
    Bae, YD
    Kang, BK
    Park, B
    Lee, SM
    Kim, YH
    Kim, HK
    Park, MK
    Kim, I
    Jang, DH
    [J]. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2005, 11 (01) : 135 - 140
  • [10] FAST WAVELENGTH SWITCHING FOR 10 GBIT/S NRZ SIGNAL WITH A TUNABLE DUPLEX INTEGRATED LIGHT-SOURCE
    OKAMOTO, H
    SATO, K
    YASAKA, H
    YOSHIKUNI, Y
    OE, K
    KISHI, K
    KONDO, Y
    YAMAMOTO, M
    [J]. ELECTRONICS LETTERS, 1995, 31 (15) : 1274 - 1276