Structure and electrical properties of (100)-oriented Pb(Zn1/3Nb2/3)O3-Pb (Mg1/3Nb2/3)O3-PbTiO3 thin films on La0.7Sr0.3MnO3 electrode by chemical solution deposition

(100)-oriented 0.462Pb(Zn1/3Nb2/3)O-3-0.308Pb(Mg1/3Nb2/3)O-3-0.23PbTiO(3) (PZN-PMN-PT) perovskite ferroelectric thin films were prepared on La0.7Sr0.3MnO3/LaAlO3 (LSMO/LAO) substrate via a chemical solution deposition route. The perovskite LSMO electrode was found to effectively suppress the pyrochlore phase while promote the growth of the perovskite phase in the PZN-PMN-PT film. The film annealed at 700 degrees C exhibited a high dielectric constant of 2130 at 1 kHz, a remnant polarization, 2P(r), of 29.8 mu C/cm(2), and a low leakage current density of 7.2 x 10(-7) A/cm(2) at an applied field of 200 kV/cm. The ferroelectric polarization was fatigue-free at least up to 10(10) cycles. Piezoelectric coefficient, d(33), of 48 pm/V was also demonstrated. The results showed that much superior properties could be achieved with the PZN-PMN-PT thin films on the solution derived LSMO electrode than on Pt electrode by sputtering. (C) 2008 Elsevier B.V. All rights reserved.