Electrodeposition and Characterization of CuTe and Cu2Te Thin Films

被引：4
|
作者：
He, Wenya [1 ,2 ]
Zhang, Hanzhi [2 ]
Zhang, Ye [2 ]
Liu, Mengdi [2 ]
Zhang, Xin [1 ,2 ]
Yang, Fengchun [2 ]
机构：
[1] Northwest Univ, Inst Analyt Sci, Shaanxi Prov Key Lab Electroanalyt Chem, Xian 710069, Shaanxi, Peoples R China
[2] Northwest Univ, Coll Chem & Mat Sci, Minist Educ, Key Lab Synthet & Nat Funct Mol Chem, Xian 710127, Shaanxi, Peoples R China
来源：
JOURNAL OF NANOMATERIALS | 2015年 / 2015卷
关键词：
ATOMIC LAYER DEPOSITION; GROWTH;
D O I：
10.1155/2015/240525
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
An electrodeposition method for fabrication of CuTe and Cu2Te thin films is presented. The films' growth is based on the epitaxial electrodeposition of Cu and Te alternately with different electrochemical parameter, respectively. The deposited thin films were characterized by X-ray diffraction (XRD), field emission scanning electronic microscopy (FE-SEM) with an energy dispersive X-ray (EDX) analyzer, and FTIR studies. The results suggest that the epitaxial electrodeposition is an ideal method for deposition of compound semiconductor films for photoelectric applications.
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页数：5
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